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| Type BSS127 SIPMOS(R) Small-Signal-Transistor Feature * n-channel * enhancement mode * Logic level * dv /dt rated * Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID 600 500 0.023 V A PG-SOT23 Type BSS127 Package PG-SOT23 Ordering Code Q67045-A5014 Tape and Reel Information E6327: 3000PCS/reel Marking SI Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 C T A=70 C Pulsed drain current I D,pulse T A=25 C I D=0.09 A, V DS=480 V, di /dt =200 A/s, T j,max=150 C Value 0.021 0.017 0.09 Unit A Reverse diode dv /dt dv /dt 6 kV/s Gate source voltage ESD sensitivity (HBM) as per MIL-STD 883 Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 V GS 20 Class 1 V P tot T j, T stg T A=25 C 0.50 -55 ... 150 55/150/56 W C Rev. 1.1 page 1 2006-03-24 BSS127 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - minimal footprint R thJA 250 K/W Values typ. max. Unit Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current V (BR)DSS V GS=0 V, I D=250 A V GS(th) I D (off) V DS=0 V, I D=8 A V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=0.016 A V GS=10 V, I D=0.016 A |V DS|>2|I D|R DS(on)max, I D=0.01 A 600 1.4 2.0 2.6 0.1 A V - 10 330 10 100 600 nA - 310 500 Transconductance g fs 0.007 0.015 - S Rev. 1.1 page 2 2006-03-24 BSS127 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 C V GS=0 V, I F=0.016 A, T j=25 C V R=300 V, I F=0.016 A, di F/dt =100 A/s 0.82 160 13.2 0.016 0.09 1.2 240 19.8 V ns nC A Q gs Q gd Qg V plateau V DD=400 V, I D=0.01 A, V GS=0 to 10 V 0.05 1.2 1.4 3.5 0.08 1.8 2.1 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=300 V, V GS=10 V, I D=0.01 A, R G=6 V GS=0 V, V DS=25 V, f =1 MHz 21 2.4 1.0 6.1 9.7 14 115 28 3 1.5 19.0 14.5 21 170 ns pF Values typ. max. Unit Rev. 1.1 page 3 2006-03-24 BSS127 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS10 V 0.03 0.5 0.02 P tot [W] 0.25 0.01 I D [A] 0 0 40 80 120 160 0 0 40 80 120 160 T A [C] T A [C] 3 Safe operating area I D=f(V DS); T A=25 C; D =0 parameter: t p 0.1 10 s 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 103 limited by on-state resistance 0.5 100 s 10 2 0.2 0.1 1 ms Z thJA [K/W] 0.05 I D [A] 0.01 10 ms 101 0.02 0.01 single pulse 100 ms 10 0 DC 0.001 1 10 100 1000 10-1 10-5 10-4 10-3 10-2 10-1 100 101 102 103 V DS [V] t p [s] Rev. 1.1 page 4 2006-03-24 BSS127 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 0.03 V 10 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 1000 2.6 V 3V V5 3.2 V 3.6 V 4V 3.8 V 0.025 800 V4 0.02 0.015 V 3.6 R DS(on) [] V 3.8 600 I D [A] 400 5V 10 V 0.01 V 3.2 0.005 200 V3 V 2.6 0 0 5 10 0 0 0.005 0.01 0.015 0.02 0.025 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 C 0.025 0.025 0.02 0.02 0.015 0.015 0.01 g fs [S] 0.01 0.005 0 0 1 2 3 4 0 0.000 0.005 0.010 0.015 0.020 I D [A] 0.005 V GS [V] I D [A] Rev. 1.1 page 5 2006-03-24 BSS127 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.1 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=VGS; I D=8 A parameter: I D 1000 3 800 2.5 max 2 R DS(on) [] 600 typ V GS(th) [V] %98 1.5 min 400 typ 1 200 0.5 0 -60 -20 20 60 100 140 0 -60 -20 20 T j [C] T j [C] 60 100 140 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz; Tj=25C 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 10-1 150 C, 98% 25 C, 98% 150 C 25 C 10 1 Ciss C [pF] I F [A] 100 Coss Crss 10-2 10-1 0 10 20 30 40 50 10-3 0 0.4 0.8 1.2 1.6 2 2.4 2.8 V DS [V] V SD [V] Rev. 1.1 page 6 2006-03-24 BSS127 13 Typ. gate charge V GS=f(Q gate); I D=0.01 A pulsed parameter: V DD 6 5 4 3 0.5 VBR(DSS) 14 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 A 700 680 660 640 2 V GS [V] 0.2 VBR(DSS) V BR(DSS) [V] 4 620 600 580 560 540 1 0 0 -1 -2 1 2 0.8 VBR(DSS) 3 520 -3 500 -4 -60 -20 20 60 100 140 Q gate [nC] T j [C] Rev. 1.1 page 7 2006-03-24 BSS127 Package Outline: Footprint: Packaging: Rev. 1.1 page 8 2006-03-24 BSS127 Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Strae 53 D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices, please contact your nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide (see address list). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 2006-03-24 |
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